Datasheet4U Logo Datasheet4U.com

IRF6629TRPBF - DirectFET Power MOSFET

Download the IRF6629TRPBF datasheet PDF (IRF6629PBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for directfet power mosfet.

Description

The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

Features

  • orward Voltage 200 180 160 ID, Drain Current (A) 3.0 Typical VGS(th) Gate threshold Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 1.5 ID = 100µA ID = 250µA 1.0 ID = 1.0mA ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 5000 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Thre.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6629PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 97235 www.DataSheet4U.com l l l l l l l l l IRF6629PbF IRF6629TRPbF DirectFET™ Power MOSFET ‚ RoHs Compliant  Typical values (unless otherwise specified) Lead-Free (Qualified up to 260°C Reflow) VDSS VGS RDS(on) RDS(on) Application Specific MOSFETs 25V max ±20V max 1.6mΩ@ 10V 2.1mΩ@ 4.5V Ideal for CPU Core DC-DC Converters Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Low Conduction Losses 34nC 11nC 4.2nC 27nC 23nC 1.8V High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  MX Applicable DirectFET Outline and Substrate Outline (see p.
Published: |