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IRF6621TRPbF - Power MOSFET

Download the IRF6621TRPbF datasheet PDF (IRF6621PbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • 0.1 1.0 10.0 100.0 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) ID, Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 50 40 2.0 ID = 250µA 30 20 1.5 10 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 60 50 40 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 3.0A 4.3A.

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Note: The manufacturer provides a single datasheet file (IRF6621PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 97093 IRF6621PbF IRF6621TRPbF DirectFET™ Power MOSFET ‚ l RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 7.0mΩ@ 10V 9.3mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 11.7nC 4.2nC 1.0nC 10nC 6.9nC 1.8V SQ DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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