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IRF6622TRPBF - DirectFET Power MOSFET

Download the IRF6622TRPBF datasheet PDF. This datasheet also covers the IRF6622PBF variant, as both devices belong to the same directfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6622PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile.

Features

  • 0.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25µA 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID = 50µA ID = 100µA ID = 250µA ID = 1mA ID = 1.0A Fig 12. Maximum Drain Current vs. Case Temperature 60 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 3.7A 5.3A BOTTOM 12A TOP 50 40 30 20 10 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maxim.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6622PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRF6643TRPbF DIGITAL AUDIO MOSFET IRF
IRF6644PbF IR MOSFET Infineon
IRF6648PbF Power MOSFET Infineon
IRF6648TRPbF Power MOSFET Infineon
IRF6662PbF Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6622 DirectFET Power MOSFET
IRF6622PBF DirectFET Power MOSFET
IRF6620 HEXFETPower MOSFET
IRF6620PBF Power MOSFET
IRF6620TRPBF Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com IRF6622PbF IRF6622TRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) PD - 97244 l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  VDSS Qg tot VGS Qgd 3.8nC RDS(on) Qgs2 1.6nC RDS(on) Qoss 7.7nC 25V max ±20V max 4.9mΩ@ 10V 6.8mΩ@ 4.5V Qrr 7.1nC Vgs(th) 1.8V 11nC SQ Applicable DirectFET Outline and Substrate Outline (see p.
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