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IRF6622 - DirectFET Power MOSFET

Description

The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile.

Features

  • anche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 3.7A 5.3A BOTTOM 12A TOP 50 40 30 20 10 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current www. irf. com 5 IRF6622 Current Regulator Same Type as D. U. T. Id Vds 50KΩ 12V .2µF .3µF Vgs D. U. T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform V(.

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Full PDF Text Transcription

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www.DataSheet4U.com PD - 97199 IRF6622 DirectFET™ Power MOSFET ‚ l l l l l l l l l RoHs Compliant Containing No Lead and Bromide  Low Profile (<0.6 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET Socket  Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 3.8nC RDS(on) Qgs2 1.6nC RDS(on) Qoss 7.7nC 25V max ±20V max 4.9mΩ@ 10V 6.8mΩ@ 4.5V Qrr 7.1nC Vgs(th) 1.8V 11nC SQ Applicable DirectFET Outline and Substrate Outline (see p.
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