Datasheet4U Logo Datasheet4U.com

IRF6620TRPBF - Power MOSFET

Download the IRF6620TRPBF datasheet PDF. This datasheet also covers the IRF6620PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6620PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Features

  • + V - DD A D. U. T VGS Pulse Width < 1µs Duty Factor < 0.1% 0.01Ω Fig 13a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 14a. Switching Time Test Circuit 90% VDS 10% VGS I AS td(on) tr td(off) tf Fig 13b. Unclamped Inductive Waveforms Fig 14b. Switching Time Waveforms Id Vds Vgs L 0 DUT 1K VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform www. irf. com 5 Free Datasheet http://www. Datasheet4U. com IRF6620PbF D. U. T Driver Gate Dr.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6620PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF6643TRPbF DIGITAL AUDIO MOSFET IRF
IRF6644PbF IR MOSFET Infineon
IRF6648PbF Power MOSFET Infineon
IRF6648TRPbF Power MOSFET Infineon
IRF6662PbF Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6620 HEXFETPower MOSFET
IRF6620PBF Power MOSFET
IRF6621 Power MOSFET
IRF6621PbF Power MOSFET
IRF6621TRPbF Power MOSFET

Full PDF Text Transcription

Click to expand full text
PD - 97092 IRF6620PbF IRF6620TRPbF l l l l l l l l l RoHS Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ VDSS 20V RDS(on) max 2.7mΩ@VGS = 10V 3.6mΩ@VGS = 4.5V Qg(typ.) 28nC MX Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6620PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
Published: |