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IRF6616TRPBF - Power MOSFET

Download the IRF6616TRPBF datasheet PDF. This datasheet also covers the IRF6616PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile.

Features

  • e Pulse 0 1 10 100 1000 1.00 1 0.10 VGS = 0V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 0.1 VDS , Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 120 100 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) 2.5 Fig11. Maximum Safe Operating Area 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Junction Temperature ( °C ) Fig.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6616PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRF6643TRPbF DIGITAL AUDIO MOSFET IRF
IRF6644PbF IR MOSFET Infineon
IRF6648PbF Power MOSFET Infineon
IRF6648TRPbF Power MOSFET Infineon
IRF6662PbF Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6616 DirectFET Power MOSFET
IRF6616PBF Power MOSFET
IRF6610 HEXFET Power MOSFET Silicon Technology
IRF6611 DirectFET Power MOSFET
IRF6611PbF DirectFET Power MOSFET

Full PDF Text Transcription

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IRF6616PbF IRF6616TRPbF RoHS compliant containing no lead or bormide  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l Lead-Free l PD - 96100 Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ VDSS VGS RDS(on) RDS(on) 40V max ±20V max 3.7mΩ@ 10V 4.6mΩ@ 4.5V Qg tot Qgd 9.4nC Qgs2 2.4nC Qrr 33nC Qoss 15nC Vgs(th) 1.8V 29nC MX Applicable DirectFET Outline and Substrate Outline (see p.
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