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IRF6613TRPBF - Power MOSFET

Download the IRF6613TRPBF datasheet PDF. This datasheet also covers the IRF6613PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6613PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Features

  • 20V D. U. T IAS tp + V - DD A D. U. T VGS Pulse Width < 1µs Duty Factor < 0.1% 0.01Ω Fig 13a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 14a. Switching Time Test Circuit 90% VDS 10% VGS I AS td(on) tr td(off) tf Fig 13b. Unclamped Inductive Waveforms Fig 14b. Switching Time Waveforms Id Vds Vgs L 0 DUT 1K VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www. irf. com 5 Free Datasheet http://www. Datasheet4U. com IRF6613PbF D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6613PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6613 HEXFET Power MOSFET
IRF6613PBF Power MOSFET
IRF6610 HEXFET Power MOSFET Silicon Technology
IRF6611 DirectFET Power MOSFET
IRF6611PbF DirectFET Power MOSFET

Full PDF Text Transcription

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PD - 97087A IRF6613PbF IRF6613TRPbF l l l l l l l l l RoHS Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ VDSS 40V RDS(on) max 3.4mΩ@VGS = 10V 4.1mΩ@VGS = 4.5V Qg(typ.) 42nC MT Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6613PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
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