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IRF1902UPBF - HEXFET Power MOSFET

Description

These N-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

Features

  • ia 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www. irf. com for sales contact information. 09/2006 www. irf. com 9.

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Full PDF Text Transcription

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PD - 96066B IRF1902UPbF HEXFET® Power MOSFET l l l www.DataSheet4U.com l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS 20V RDS(on) max (mW) 85@VGS = 4.5V 170@VGS = 2.7V ID 4.0A 3.2A Description These N-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
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