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IRF1902PBF - HEXFET Power MOSFET

Description

S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power

Features

  • as been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD.

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Full PDF Text Transcription

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PD - 95496 IRF1902PbF HEXFET® Power MOSFET l l l www.DataSheet4U.com l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS 20V RDS(on) max (mW) 85@VGS = 4.5V 170@VGS = 2.7V ID 4.0A 3.2A These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
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