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IRF1104LPBF - (IRF1104S/LPBF) HEXFET Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • y Duty Factor "D" D. U. T. - Device Under Test + V DD et4U. com DataShee DataSheet4U. com Driver Gate Drive P. W. Period D= P. W. Period VGS=10V.
  • D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
  • VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

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www.DataSheet4U.com PD - 95526 IRF1104S/LPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 0.009Ω G S ID = 100A… Description Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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