N0042Y - Process Geometry

InterFET

General Description

The InterFET N0042Y Geometry is targeted for high voltage applications.

The low input capacitance makes it ideal for higher frequency applications.

IFN6449, IFN6450 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Dr

Key Features

Typical Input Capacitance: 6pF.
High Breakdown Voltage: -400V Typical.
Small Die: 746um X 746um X 203um.
Bond Pads: 95um Diameter.
Substrate Connected to Gate.
Au Back-Side Finish.

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N0042Y process geometry by InterFET - Datasheet Preview

Datasheet Details

Part number	N0042Y
Manufacturer	InterFET
File Size	870.35 KB
Description	Process Geometry
Datasheet	N0042Y Datasheet

Full PDF Text Transcription for N0042Y (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for N0042Y. For precise diagrams, and layout, please refer to the original PDF.

InterFET Product Folder Technical Support Order Now N0042Y N0042Y Process Geometry Features • Typical Input Capacitance: 6pF • High Breakdown Voltage: -400V Typical • Sma...

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l Input Capacitance: 6pF • High Breakdown Voltage: -400V Typical • Small Die: 746um X 746um X 203um • Bond Pads: 95um Diameter • Substrate Connected to Gate • Au Back-Side Finish Applications • General Purpose Amplifier • High Breakdown Voltage • Custom Part Options Description The InterFET N0042Y Geometry is targeted for high voltage applications. The low input capacitance makes it ideal for higher frequency applications.

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