N0026S Key Features
- Low Input Capacitance: 4.3pF Typical
- Low Gate Leakage: 10pA Typical
- High Breakdown Voltage: -45V Typical
- High Input Impedance
- Small Die: 365um X 365um X 203um
- Bond Pads: 90um X 90um
- Substrate Connected to Gate
- Au Back-Side Finish
- Part: N0026S
- Description: Process Geometry
- Manufacturer: InterFET
- Size: 873.24 KB
Related InterFET Datasheets
| Part Number | Description |
|---|---|
| N0001H | Process Geometry |
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| N0030L | Process Geometry |