N0001H - Process Geometry

InterFET

General Description

The InterFET N0001H Geometry is targeted high impedance low leakage applications.

The low input capacitance makes it ideal for high frequency applications.

2N4117/A, 2N4118/A, 2N4119/A PAD1, PAD2, PAD5, PAD10

Key Features

Low Input Capacitance: 2.0pF Typical.
Low Gate Leakage: 0.5pA Typical.
High Breakdown Voltage: -60V Typical.
High Input Impedance.
Small Die: 365um X 365um X 203um.
Bond Pads: 90um X 90um.
Substrate Connected to Gate.
Au Back-Side Finish.

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N0001H process geometry by InterFET - Datasheet Preview

Datasheet Details

Part number	N0001H
Manufacturer	InterFET
File Size	569.49 KB
Description	Process Geometry
Datasheet	N0001H Datasheet

Full PDF Text Transcription for N0001H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for N0001H. For precise diagrams, and layout, please refer to the original PDF.

InterFET Product Folder Technical Support Order Now N0001H N0001H Process Geometry Features • Low Input Capacitance: 2.0pF Typical • Low Gate Leakage: 0.5pA Typical • Hig...

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put Capacitance: 2.0pF Typical • Low Gate Leakage: 0.5pA Typical • High Breakdown Voltage: -60V Typical • High Input Impedance • Small Die: 365um X 365um X 203um • Bond Pads: 90um X 90um • Substrate Connected to Gate • Au Back-Side Finish Applications • Small Signal Amplifier • Ultrahigh Impedance Pre-Amplifier • Pico-Amp Diodes (PAD) • High Input Impedance Buffers • Custom Part Options Description The InterFET N0001H Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for high frequency applications.

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