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IS41LV44002B - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Datasheet Summary

Description

The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory.

These devices offer an accelerated cycle access called EDO Page Mode.

EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

Features

  • Extended Data-Out (EDO) Page Mode access cycle.
  • TTL compatible inputs and outputs.
  • Refresh Interval:.
  • 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 3.3V ± 10% Byte Write and Byte Read operation via two CAS Industrial Temperature Range: -40°C to +85°C Lead-free available www. DataSheet4U. com ISSI JULY 2006 ®.

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Datasheet Details

Part number IS41LV44002B
Manufacturer Integrated Silicon Solution
File Size 193.78 KB
Description 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Datasheet download datasheet IS41LV44002B Datasheet
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Full PDF Text Transcription

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IS41LV44002B 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: • • • • • – 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 3.3V ± 10% Byte Write and Byte Read operation via two CAS Industrial Temperature Range: -40°C to +85°C Lead-free available www.DataSheet4U.com ISSI JULY 2006 ® DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.
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