IS41LV16100B Datasheet PDF - Integrated Silicon Solution 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE Specs

IS41LV16100B - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Datasheet Summary

Description

The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.

These devices offer an accelerated cycle access called EDO Page Mode.

EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

Features

TTL compatible inputs and outputs; tristate I/O.
Refresh Interval:.
Auto refresh Mode: 1,024 cycles /16 ms.
RAS-Only, CAS-before-RAS (CBR), and Hidden.
JEDEC standard pinout.
Single power supply: 3.3V ± 10%.
Byte Write and Byte Read operation via two CAS.
Industrial Temperature Range: -40oC to +85oC.
Lead-free available www. DataSheet4U. com ISSI APRIL 2005 ®.

Datasheet Details

Part number	IS41LV16100B
Manufacturer	Integrated Silicon Solution
File Size	180.45 KB
Description	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Datasheet	IS41LV16100B Datasheet
Additional preview pages of the IS41LV16100B datasheet.

📁 Similar Datasheet

IS41LV16256 - 256K x 16 (4-MBIT) DYNAMIC RAM (ISSI)

IS41LV16257 - 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE (Integrated Silicon Solution Inc)

IS41LV1665 - 64K x16 bit Dynamic RAM (ICSI)

IS41LV32256 - EDO DYNAMIC RAM (ISSI)

IS41LV44052B - 4M x 4 (16-MBIT) DYNAMIC RAM (ISSI)

IS41LV8512 - 512K x 8 (4-MBIT) DYNAMIC RAM (Integrated Circuit Solution)

IS41C16128 - 128K x 16 (2-MBIT) DYNAMIC RAM (ISSI)

IS41C16256 - 256K x 16 (4-MBIT) DYNAMIC RAM (ISSI)

IS41C16257 - 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE (Integrated Silicon Solution Inc)

IS41C8512 - 512K x 8 (4-MBIT) DYNAMIC RAM (Integrated Circuit Solution)

Full PDF Text Transcription

Click to expand full text

IS41LV16100B 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: — Auto refresh Mode: 1,024 cycles /16 ms — RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply: 3.3V ± 10% • Byte Write and Byte Read operation via two CAS • Industrial Temperature Range: -40oC to +85oC • Lead-free available www.DataSheet4U.com ISSI APRIL 2005 ® DESCRIPTION The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

Published: Apr 22, 2010 |