IS41LV16100 Datasheet PDF - Integrated Silicon Solution 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE Specs

IS41LV16100 - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Datasheet Summary

Description

The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.

These devices offer an accelerated cycle access called EDO Page Mode.

Features

TTL compatible inputs and outputs; tristate I/O.
Refresh Interval:.
Auto refresh Mode: 1,024 cycles /16 ms.
RAS-Only, CAS-before-RAS (CBR), and Hidden.
Self refresh Mode - 1,024 cycles / 128ms.
JEDEC standard pinout.
Single power supply:.
5V ± 10% (IS41C16100).
3.3V ± 10% (IS41LV16100).
Byte Write and Byte Read operation via two CAS.
Industrail Temperature Range -40oC to 85oC.
Lead-free a.

Datasheet Details

Part number	IS41LV16100
Manufacturer	Integrated Silicon Solution
File Size	207.40 KB
Description	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Datasheet	IS41LV16100 Datasheet
Additional preview pages of the IS41LV16100 datasheet.

📁 Similar Datasheet

IS41LV16256 - 256K x 16 (4-MBIT) DYNAMIC RAM (ISSI)

IS41LV16257 - 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE (Integrated Silicon Solution Inc)

IS41LV1665 - 64K x16 bit Dynamic RAM (ICSI)

IS41LV32256 - EDO DYNAMIC RAM (ISSI)

IS41LV44052B - 4M x 4 (16-MBIT) DYNAMIC RAM (ISSI)

IS41LV8512 - 512K x 8 (4-MBIT) DYNAMIC RAM (Integrated Circuit Solution)

IS41C16128 - 128K x 16 (2-MBIT) DYNAMIC RAM (ISSI)

IS41C16256 - 256K x 16 (4-MBIT) DYNAMIC RAM (ISSI)

IS41C16257 - 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE (Integrated Silicon Solution Inc)

IS41C8512 - 512K x 8 (4-MBIT) DYNAMIC RAM (Integrated Circuit Solution)

Full PDF Text Transcription

Click to expand full text

IS41C16100 IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: — Auto refresh Mode: 1,024 cycles /16 ms — RAS-Only, CAS-before-RAS (CBR), and Hidden — Self refresh Mode - 1,024 cycles / 128ms • JEDEC standard pinout • Single power supply: — 5V ± 10% (IS41C16100) — 3.3V ± 10% (IS41LV16100) • Byte Write and Byte Read operation via two CAS • Industrail Temperature Range -40oC to 85oC • Lead-free available www.DataSheet4U.com ISSI December 2005 ® DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode.

Published: Apr 22, 2010 |