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IS41C16256 - 256K x 16 (4-MBIT) DYNAMIC RAM

This page provides the datasheet information for the IS41C16256, a member of the IS41LV16256 256K x 16 (4-MBIT) DYNAMIC RAM family.

Datasheet Summary

Description

high-performanceCMOSDynamicRandomAccessMemory.

Both products offer accelerated cycle access EDO Page Mode.

EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word.

Features

  • TTL compatible inputs and outputs.
  • Refresh Interval: 512 cycles/8 ms.
  • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • JEDEC standard pinout.
  • Single power supply 5V ± 10% (IS41C16256) 3.3V ± 10% (IS41LV16256).
  • Byte Write and Byte Read operation via two CAS.
  • Extended Temperature Range -30oC to 85oC.
  • Industrail Temperature Range -40oC to 85oC.

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Datasheet preview – IS41C16256

Datasheet Details

Part number IS41C16256
Manufacturer ISSI
File Size 141.73 KB
Description 256K x 16 (4-MBIT) DYNAMIC RAM
Datasheet download datasheet IS41C16256 Datasheet
Additional preview pages of the IS41C16256 datasheet.

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Full PDF Text Transcription

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IS41C16256 IS41LV16256 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE ISSI® JUNE 2000 FEATURES • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply 5V ± 10% (IS41C16256) 3.3V ± 10% (IS41LV16256) • Byte Write and Byte Read operation via two CAS • Extended Temperature Range -30oC to 85oC • Industrail Temperature Range -40oC to 85oC DESCRIPTION The ISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performanceCMOSDynamicRandomAccessMemory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word.
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