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VTSV02350 - RF Power N-channel MOSFET

Description

The VTSV02350 is a 350-watt, gold metallized N-channel MOSFETs, designed for HF/VHF/UHF commercial and industrial applications at frequencies up to 200 MHz.

Typical Performance (In Demo Fixture): VDD = 50 Volts, IDQ = 500 mA, CW.

Features

  • Gold metallization.
  • Common source configuration, push pull.
  • Excellent thermal stability, low HCI drift.
  • Low RDS(on).
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ ) Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol V(BR)DSS VDGR VGS ID PDISS Tstg TC TJ Drain 12 Gate Source 34 5 Figure 1. Pin Connection Value 130.

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Datasheet Details

Part number VTSV02350
Manufacturer Innogration
File Size 906.02 KB
Description RF Power N-channel MOSFET
Datasheet download datasheet VTSV02350 Datasheet

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. 350W, 50V RF Power N-channel MOSFETs Description The VTSV02350 is a 350-watt, gold metallized N-channel MOSFETs, designed for HF/VHF/UHF commercial and industrial applications at frequencies up to 200 MHz.  Typical Performance (In Demo Fixture): VDD = 50 Volts, IDQ = 500 mA, CW. Frequency Gp (dB) POUT (W) D (%) 175 MHz 17 350 60 Document Number: VTSV02350 Production Datasheet V1.1 VTSV02350 Features  Gold metallization  Common source configuration, push pull  Excellent thermal stability, low HCI drift  Low RDS(on)  Pb-free, RoHS-compliant Table 1.
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