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VTSU01900 - RF Power N-channel MOSFET

Description

applications at frequencies up to 200 MHz.

It’s suitable for use in industrial, scientific and medical applications.

Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty

Features

  • Common source configuration, push pull.
  • Excellent thermal stability, low HCI drift.
  • Low RDS(on).
  • Pb-free, RoHS-compliant Document Number: VTSU01900 Production Datasheet V1.0 VTSU01900 Drain 1 Gate 2 Source 3 Figure 1. Pin Connection Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ) Gate-Source Voltage Drain Current Power Dissipati.

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Datasheet Details

Part number VTSU01900
Manufacturer Innogration
File Size 859.64 KB
Description RF Power N-channel MOSFET
Datasheet download datasheet VTSU01900 Datasheet

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. 900W, 100V RF Power N-channel MOSFETs Description The VTSU01900 is a 900-watt, N-channel MOSFETs, designed for pulsed or CW applications at frequencies up to 200 MHz. It’s suitable for use in industrial, scientific and medical applications.  Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycle=10% Frequency Gp (dB) POUT (W) D (%) 120 MHz 20 900 65 Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, CW Frequency Gp (dB) POUT (W) D (%) 120 MHz 24 550 68 Features  Common source configuration, push pull  Excellent thermal stability, low HCI drift  Low RDS(on)  Pb-free, RoHS-compliant Document Number: VTSU01900 Production Datasheet V1.
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