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VTSV02175 - RF Power N-channel MOSFET

Description

The VTSV02175 is a 175-watt, gold metallized N-channel MOSFETs, designed for HF/VHF/UHF commercial and industrial applications at frequencies up to 200 MHz.

Typical Performance (In Demo Fixture): VDD = 50 Volts, IDQ = 250 mA, CW.

Features

  • Gold metallization.
  • Common source configuration.
  • Excellent thermal stability, low HCI drift.
  • Low RDS(on).
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ ) Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol V(BR)DSS VDGR VGS ID PDISS Tstg TC TJ Drain Gate 13 Source 24 Figure 1. Pin Connection Value 130 130 -40 to +40.

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Datasheet Details

Part number VTSV02175
Manufacturer Innogration
File Size 872.92 KB
Description RF Power N-channel MOSFET
Datasheet download datasheet VTSV02175 Datasheet

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. 175W, 50V RF Power N-channel MOSFETs Description The VTSV02175 is a 175-watt, gold metallized N-channel MOSFETs, designed for HF/VHF/UHF commercial and industrial applications at frequencies up to 200 MHz.  Typical Performance (In Demo Fixture): VDD = 50 Volts, IDQ = 250 mA, CW. Frequency Gp (dB) POUT (W) D (%) 175 MHz 15.5 190 63 Document Number: VTSV02175 Product Datasheet V1.2 VTSV02175 Features  Gold metallization  Common source configuration  Excellent thermal stability, low HCI drift  Low RDS(on)  Pb-free, RoHS-compliant Table 1.
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