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VTSU011K2 - RF Power N-channel MOSFET

Description

applications at frequencies up to 200 MHz.

It’s suitable for use in industrial, scientific and medical applications.

Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycl

Features

  • Common source configuration, push pull.
  • Excellent thermal stability, low HCI drift.
  • Low RDS(on).
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ) Gate-Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol V(BR)DSS VDGR VGS Tstg TC TJ Drain 1 Gate 2 Source 3 Figure 1. Pin Connection Value 200 200 -20 to +20 -65 to 150 150 200 Unit V V V.

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Datasheet Details

Part number VTSU011K2
Manufacturer Innogration
File Size 789.60 KB
Description RF Power N-channel MOSFET
Datasheet download datasheet VTSU011K2 Datasheet

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. 1200W, 100V RF Power N-channel MOSFETs Description The VTSU011K2 is a 1200-watt, N-channel MOSFETs, designed for pulsed applications at frequencies up to 200 MHz. It’s suitable for use in industrial, scientific and medical applications.  Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycle=10% Frequency Gp (dB) POUT (W) D (%) 120 MHz 26 1200 60 Document Number: VTSU011K2 Production Datasheet V1.0 VTSU011K2 Features  Common source configuration, push pull  Excellent thermal stability, low HCI drift  Low RDS(on)  Pb-free, RoHS-compliant Table 1.
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