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ITCH25280D4 - High Power RF LDMOS FET

Description

with frequencies from 2400 to 2500 MHz.

It is qualified up to 32V operation.

Typical Performance (on Innogration fixture with devi

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Excellent thermal stability, low HCI drift.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage.

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Datasheet Details

Part number ITCH25280D4
Manufacturer Innogration
File Size 622.10 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH25280D4 Datasheet

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH25280D4 Preliminary Datasheet V1.0 2400-2500MHz, 280W, High Power RF LDMOS FETs Description The ITCH25280D4 is a 280-watt, internally matched LDMOS FETs, designed for Multiple use especially RF Energy application including cooking, heating and medical with frequencies from 2400 to 2500 MHz. It is qualified up to 32V operation. Typical Performance (on Innogration fixture with device soldered): Idq=20mA Tcase=25 Degree C Freq(MHz) Pout (W) Vdd(V) Ids(A) Gp（dB） Eff(%) 2450 310 32 17 13.
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