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Innogration (Suzhou) Co., Ltd.
Document Number: ITCH20120B2 Preliminary Datasheet V1.0
1800MHz-2000MHz, 120W, 28V High Power RF LDMOS FETs
Description
The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH20120B2
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% .
Frequency
Gp (dB)
P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%)
1805 MHz
19.3
50.7
55.6
51.3
56.9
1842.5 MHz
19.3
50.7
54.6
51.5
56.4
1880 MHz
19.8
50.7
53.3
51.4
55.
ITCH20120B2 Datasheet
