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ITCH25350D4 - High Power RF LDMOS FET

Description

The ITCH25350D4 is a 350-watt, internally matched LDMOS FETs, designed for Multiple use especially RF Energy application including cooking, heating and medical with frequencies from 2400 to 2500 MHz.

It is qualified up to 32V operation.

Typical Performance (on Innogration fixture

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Excellent thermal stability, low HCI drift.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Ratin.

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Datasheet Details

Part number ITCH25350D4
Manufacturer Innogration
File Size 510.42 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH25350D4 Datasheet

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH25350D4 Preliminary Datasheet V1.0 2400-2500MHz, 350W, High Power RF LDMOS FETs Description The ITCH25350D4 is a 350-watt, internally matched LDMOS FETs, designed for Multiple use especially RF Energy application including cooking, heating and medical with frequencies from 2400 to 2500 MHz. It is qualified up to 32V operation. ITCH25350D4 Typical Performance (on Innogration fixture with device soldered): Tcase=25 Degree C Freq(MHz) Pout (W) Vdd(V) Ids(A) Gp（dB） Eff(%) 2450 300 28 19.1 12.8 56. 2450 350 32 19.9 13.8 55 2450 400 32 22.4 12.4 55.
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