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SIGC12T120LE
IGBT3 Power Chip
Features: 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling
This chip is used for: power module
Applications: drives
C G
E
Chip Type SIGC12T120LE
VCE 1200V
ICn 8A
Die Size 3.54 x 3.5 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
3.54 x 3.5
2.028 x 2.028 1.107 x 0.702
mm2
12.39 / 6.
SIGC12T120LE Datasheet
