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SIGC12T120L
IGBT Chip
FEATURES: • 1200V Trench & Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
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This chip is used for: • power module
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Applications: • drives
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Chip Type SIGC12T120L
VCE 1200V
ICn 8A
Die Size 3.54 x 3.5 mm2
Package sawn on foil
Ordering Code Q67050A4269-A101
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 3.54 x 3.5 2.03 x 2.03 1.1 x 0.7 12.4 / 6.
SIGC12T120L Datasheet
