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SIGC128T170R3
IGBT Chip
FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module
C
Applications: • drives
G
E
Chip Type SIGC128T170R3
VCE
ICn
Die Size 11.33 x 11.33 mm2
Package sawn on foil
Ordering Code Q67050A4189-A001
1700V 100A
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 11.33 x 11.33 8 x ( 4.48 x 2.15 ) 1.18 x 1.09 128.4 / 99.
SIGC128T170R3 Datasheet
