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SIGC12T120E - IGBT

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.2 2.3 Subjects (major changes since last revision) Wafer diameter change to 200 mm Additional basic types L7621M, L7621T, L7621E Date 06.07.20

Features

  • 1200V Trench + Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • power modules.

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Datasheet preview – SIGC12T120E

Datasheet Details

Part number SIGC12T120E
Manufacturer Infineon
File Size 163.19 KB
Description IGBT
Datasheet download datasheet SIGC12T120E Datasheet
Additional preview pages of the SIGC12T120E datasheet.

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Full PDF Text Transcription

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SIGC12T120E IGBT3 Power Chip Features:  1200V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type SIGC12T120E VCE 1200V IC 8A Die Size 3.54 x 3.5 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 3.54 x 3.5 2.028 x 2.028 1.107 x 0.702 mm2 12.
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