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PTFA211801F - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications.

They are characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.

Thermally-enhanced packaging provides the coolest operation available.

Features

  • Thermally-enhanced packages, Pb-free and RoHS-compliant.
  • Broadband internal matching.
  • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion =.
  • 36 dBc - Adjacent channel power =.
  • 41 dBc.
  • Typical CW performance, 2170 MHz, 30 V - Output power at P.
  • 1dB = 180 W - Efficiency = 52%.
  • Integrated ESD protection: Human Body Model.

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Datasheet Details

Part number PTFA211801F
Manufacturer Infineon
File Size 257.39 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA211801F Datasheet

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Full PDF Text Transcription

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PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. PTFA211801E Package H-36260-2 PTFA211801F Package H-37260-2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.
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