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PTFA211001E - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications.

It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.

Thermally-enhanced packaging provides the coolest operation available.

Features

  • Thermally-enhanced package, Pb-free and RoHScompliant.
  • Broadband internal matching.
  • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 23 W - Linear Gain = 16 dB - Efficiency = 28.5% - Intermodulation distortion =.
  • 37 dBc - Adjacent channel power =.
  • 41 dBc.
  • Typical CW performance, 2170 MHz, 28 V - Output power at P.
  • 1dB = 125 W - Efficiency = 57%.
  • Integrated ESD protection: Human Body Model, Class.

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Datasheet Details

Part number PTFA211001E
Manufacturer Infineon
File Size 213.18 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA211001E Datasheet

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Full PDF Text Transcription

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PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.
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