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PTFA211801E - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications.

It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.

Features

  • Broadband internal matching.
  • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion =.
  • 36 dBc - Adjacent channel power =.
  • 41 dBc.
  • Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 180 W - Efficiency = 52%.
  • Integrated ESD protection.
  • Excellent thermal stability, low HCI drift.
  • Capable of handling 10:.

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Datasheet Details

Part number PTFA211801E
Manufacturer Infineon
File Size 480.12 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA211801E Datasheet

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Full PDF Text Transcription

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IM3 (dBc), ACPR (dBc) not DrainrecommenEffdiciencyed(%)for new design PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA211801E Package H-36260-2 Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.
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