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PTFA210301E - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications.

It is optimized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.

Thermally-enhanced packaging provides the coolest operation available.

Features

  • Thermally-enhanced packaging, Pb-free and RoHS-compliant.
  • Broadband internal matching.
  • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 33 dBm - Linear Gain = 16.5 dB - Intermodulation distortion =.
  • 50 dBc - Adjacent channel power =.
  • 52 dBc.
  • Typical CW performance, 2170 MHz, 28 V - Output power at P.
  • 1dB = 40 W - Efficiency = 59%.
  • Integrated ESD protection: Human Body Model, Class 2 (minimum).

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Datasheet Details

Part number PTFA210301E
Manufacturer Infineon
File Size 188.43 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA210301E Datasheet

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Full PDF Text Transcription

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PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 – 2170 MHz Description The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is optimized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.
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