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ISC800P06LM - MOSFET

Description

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Features

  • P-Channel.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • 100% avalanche tested.
  • Logic Level.
  • Enhancement mode.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Datasheet preview – ISC800P06LM

Datasheet Details

Part number ISC800P06LM
Manufacturer Infineon
File Size 1.19 MB
Description MOSFET
Datasheet download datasheet ISC800P06LM Datasheet
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Full PDF Text Transcription

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ISC800P06LM MOSFET OptiMOSTMPowerTransistor,-60V Features •P-Channel •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •LogicLevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS -60 V RDS(on),max 80 mΩ ID -19.6 A SuperSO8 8 7 65 56 78 1 23 4 4321 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode ISC800P06LM Package PG-TDSON-8 Marking 800P06LM RelatedLinks - Final Data Sheet 1 Rev.2.0,2022-10-13 OptiMOSTMPowerTransistor,-60V ISC800P06LM TableofContents Description . . . . . . . . . . . . . .
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