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ISC011N06LM5
MOSFET
OptiMOSTM5Power-Transistor,60V
Features
•Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalperformance •175°Crated •N-channel •Pb-freeleadplating:RoHScompliant •Halogen-freeaccordingtoEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
1.15
mΩ
ID
288
A
Qoss
103
nC
QG(0V..4.5V)
63
nC
PG-TDSON-8
8 7
6
5
5 6
7
8
Pin 1
2 3 4
4 3 2 1
Drain Pin 5-8
Gate
*1
Pin 4
Source *1: Internal body diode Pin 1-3
Type/OrderingCode ISC011N06LM5
Package PG-TDSON-8 FL
Marking 011N06L
RelatedLinks -
Final Data Sheet
1
Rev.2.