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ISC010N04NM6
MOSFET
OptiMOSTM6Power-Transistor,40V
Features
•OptimizedforLowVoltageDrivesapplications •OptimizedforBatteryPoweredapplication •OptimizedforSynchronousapplication •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •175°Crated
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
1.0
mΩ
ID
285
A
Qoss
73
nC
QG(0V..