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ISC012N04LM6
MOSFET
OptiMOSTM6Power-Transistor,40V
Features
•N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Optimizedforsyncronousapplication •175°Crated
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
1.2
mΩ
ID
238
A
Qoss
56
nC
QG
25
nC
TDSON-8FL(enlargedsourceinterconnection)
8 7 65
1 2 3 4
4 3 2 1
5 67 8
Drain Pin 5-8
Gate
*1
Pin 4
Source *1: Internal body diode Pin 1-3
Type/OrderingCode ISC012N04LM6
Package PG-TDSON-8 FL
Marking 12N04LM6
RelatedLinks -
Final Data Sheet
1
Rev.2.