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ISC018N08NM6 - 80V MOSFET

General Description

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Key Features

  • N-channel, normal level.
  • Very low on-resistance RDS(on).
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low reverse recovery charge (Qrr).
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21.
  • Ideal for high frequency switching and synchronous rectification.
  • 175° C operating temperature.
  • High avalanche energy rating Product validation Fully qualified according to JEDEC for Industrial A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISC018N08NM6 MOSFET OptiMOSTM6Power-Transistor,80V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhighfrequencyswitchingandsynchronousrectification •175°Coperatingtemperature •Highavalancheenergyrating Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 1.8 mΩ ID 230 A Qoss 126 nC QG(0V...