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IQE022N06LM5
MOSFET
OptiMOSTM5Power-Transistor,60V
Features
•OptimizedforhighperformanceSMPS,e.g.synchronousrectification •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max@10V
2.2
mΩ
RDS(on),max@4.5V
2.9
mΩ
ID
151
A
Qoss
45
nC
QG(0V...4.5V)
26
nC
PG-TSON-8
5678
43 2 1
Drain Pin 5-8 Gate Pin 4 Source Pin 1-3
Type/OrderingCode IQE022N06LM5
Package PG-TSON-8
Marking 022N6L5
RelatedLinks -
Final Data Sheet
1
Rev.2.