IQE006NE2LM5SC - MOSFET

Datasheet Summary

Description

Features

Very low on-resistance RDS(on).
100% avalanche tested.
Superior thermal resistance.
N-channel, logic level.
Pb-free lead plating; RoHS compliant.
Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

Infineon

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Datasheet Details

Part number	IQE006NE2LM5SC
Manufacturer	Infineon
File Size	1.60 MB
Description	MOSFET
Datasheet	IQE006NE2LM5SC Datasheet
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IQE006NE2LM5SC MOSFET OptiMOSTM5Power-Transistor,25V Features •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 0.58 mΩ ID 310 A Qoss 41 nC QG(0V...4.5V) 29 nC PG-WHSON-8 5 6 7 8 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode IQE006NE2LM5SC Package PG-WHSON-8 Marking A RelatedLinks - Final Data Sheet 1 Rev.2.

Published: Jul 21, 2023 |