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IQE006NE2LM5CG - 25V MOSFET

Datasheet Summary

Description

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Features

  • Very low on-resistance RDS(on).
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel, logic level.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Datasheet Details

Part number IQE006NE2LM5CG
Manufacturer Infineon
File Size 1.00 MB
Description 25V MOSFET
Datasheet download datasheet IQE006NE2LM5CG Datasheet
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Full PDF Text Transcription

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IQE006NE2LM5CG MOSFET OptiMOSTM5Power-Transistor,25V Features •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 0.65 mΩ ID 298 A Qoss 41 nC QG(0V..4.5V) 29 nC PG-TTFN-9-1 1 234 9 8765 Drain Pin 5-8 Gate Pin 9 Source Pin 1-4 Type/OrderingCode IQE006NE2LM5CG Package PG-TTFN-9-1 Marking 006E2C5 RelatedLinks - Final Data Sheet 1 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5CG TableofContents Description . . . . . . . . . . . . . .
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