Datasheet4U Logo Datasheet4U.com

IQE006NE2LM5 - MOSFET

Datasheet Summary

Description

.

.

.

.

Features

  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

📥 Download Datasheet

Datasheet preview – IQE006NE2LM5

Datasheet Details

Part number IQE006NE2LM5
Manufacturer Infineon
File Size 1.39 MB
Description MOSFET
Datasheet download datasheet IQE006NE2LM5 Datasheet
Additional preview pages of the IQE006NE2LM5 datasheet.

📁 Similar Datasheet

  • IQEXO-3 - Crystal oscillator module (ETC)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
IQE006NE2LM5 MOSFET OptiMOSTM5Power-Transistor,25V Features •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 0.65 mΩ ID 298 A Qoss 41 nC QG(0V..4.5V) 29 nC PG-TSON-8-4 876 5 12 3 4 Drain Pin 5-8 Gate Pin 4 Source Pin 1-3 Type/OrderingCode IQE006NE2LM5 Package PG-TSON-8-4 Marking 006E2L5 RelatedLinks - Final Data Sheet 1 Rev.2.1,2020-03-16 OptiMOSTM5Power-Transistor,25V IQE006NE2LM5 TableofContents Description . . . . . . . . . . . . . . . .
Published: |