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IQE013N04LM6CGSC
MOSFET
OptiMOSTM6Power-Transistor,40V
Features
•Optimizedforsynchronousrectification •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
1.35
mΩ
ID
205
A
Qoss
45
nC
QG(0V...4.5V)
20
nC
PG-WHTFN-9
5 678
Pin 1 2 3 4
9 4
3 2 1
Drain Pin 5-8
Gate
*1
Pin 9
Source
Pin 1-4
*1: Internal body diode
Type/OrderingCode IQE013N04LM6CGSC
Package PG-WHTFN-9
Marking N
RelatedLinks -
Final Data Sheet
1
Rev.2.