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IQDH88N06LM5SC Final datasheet
MOSFET
OptiMOS™ 5 Power‑Transistor, 60 V
Features
• N‑channel, logic level • Very low on‑resistance RDS(on) • Superior thermal resistance • Optimized design for double side cooling • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Parameter VDS RDS(on),max ID Qoss QG
Key Performance Parameters
Value
Unit
60
V
0.86
mΩ
447
A
133
nC
76
nC
Type/Ordering Code IQDH88N06LM5SC
Package PG‑WHSON‑8
PG‑WHSON‑8
5 67 8
tab
4 3 21
Drain Pin 5-8, tab
Gate
*1
Pin 4
Source *1: Internal body diode Pin 1-3
Marking EA
Related Links ‑
Datasheet
https://www.infineon.com
1
Revision 2.