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IQDH29NE2LM5CG
MOSFET
OptiMOSTM5Power-Transistor,25V
Features
•N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
25
V
RDS(on),max
0.29
mΩ
ID
789
A
Qoss
127
nC
QG
88
nC
PG-TTFN-9
5 6 7 8
9 4
3 2 1
Drain Pin 5-8
Gate Pin 9
Source Pin 1-4
Type/OrderingCode IQDH29NE2LM5CG
Package PG-TTFN-9
Marking H29E2LC
RelatedLinks -
Final Data Sheet
1
Rev.2.1,2023-03-29
OptiMOSTM5Power-Transistor,25V
IQDH29NE2LM5CG
TableofContents
Description . . . . . . . . . . . . . . . . . .