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IQDH88N06LM5
MOSFET
OptiMOSTM5Power-Transistor,60V
Features
•N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
0.86
mΩ
ID
447
A
Qoss
133
nC
QG
76
nC
PG-TSON-8
5 6 7 8
4 3 2 1
Drain Pin 5-8
Gate
*1
Pin 4
Source *1: Internal body diode Pin 1-3
Type/OrderingCode IQDH88N06LM5
Package PG-TSON-8
Marking H8806L5
RelatedLinks -
Final Data Sheet
1
Rev.2.0,2023-08-16
OptiMOSTM5Power-Transistor,60V
IQDH88N06LM5
TableofContents
Description . . . . . .