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IQD009N06NM5 - MOSFET

Datasheet Summary

Description

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Features

  • N-channel, normal level.
  • Very low on-resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Datasheet Details

Part number IQD009N06NM5
Manufacturer Infineon
File Size 1.19 MB
Description MOSFET
Datasheet download datasheet IQD009N06NM5 Datasheet
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IQD009N06NM5 MOSFET OptiMOSTM5Power-Transistor,60V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 0.9 mΩ ID 445 A Qoss 127 nC QG 120 nC PG-TSON-8 5 6 7 8 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode IQD009N06NM5 Package PG-TSON-8 Marking 00906N5 RelatedLinks - Final Data Sheet 1 Rev.2.0,2023-08-08 OptiMOSTM5Power-Transistor,60V IQD009N06NM5 TableofContents Description . . . . . .
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