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IQD020N10NM5CG - MOSFET

Description

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Features

  • N-channel, normal level.
  • Very low on-resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Datasheet Details

Part number IQD020N10NM5CG
Manufacturer Infineon
File Size 1.12 MB
Description MOSFET
Datasheet download datasheet IQD020N10NM5CG Datasheet
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IQD020N10NM5CG MOSFET OptiMOSTM5Power-Transistor,100V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 2.05 mΩ ID 273 A Qoss 125 nC QG 107 nC PG-TTFN-9 5 6 7 8 9 4 3 2 1 Drain Pin 5-8 Gate Pin 9 Source Pin 1-4 Type/OrderingCode IQD020N10NM5CG Package PG-TTFN-9 Marking 02010NC RelatedLinks - Final Data Sheet 1 Rev.2.1,2023-04-04 OptiMOSTM5Power-Transistor,100V IQD020N10NM5CG TableofContents Description . . . . . . . . . . . . . . . .
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