IPI076N15N5 - MOSFET

Description

Features

Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
Very low reverse recovery charge (Qrr).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPI076N15N5
Manufacturer	Infineon
File Size	1.47 MB
Description	MOSFET
Datasheet	IPI076N15N5 Datasheet
Additional preview pages of the IPI076N15N5 datasheet.

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IPI076N15N5 MOSFET OptiMOSª5Power-Transistor,150V Features •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Verylowreverserecoverycharge(Qrr) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max 7.6 mΩ ID 112 A Qrr 96 nC I²-PAK tab 1 23 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPI076N15N5 Package PG-TO262-3 Marking 076N15N5 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.

Published: Dec 15, 2016 |