IPI075N15N3 - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤7.5mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IPI075N15N3
Manufacturer	INCHANGE
File Size	281.68 KB
Description	N-Channel MOSFET
Datasheet	IPI075N15N3 Datasheet
Additional preview pages of the IPI075N15N3 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 100 A IDM Drain Current-Single Pulsed 400 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.

Published: Oct 29, 2020 |