IPI072N10N3 - Power Transistor

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

Datasheet Details

Part number	IPI072N10N3
Manufacturer	Infineon
File Size	307.82 KB
Description	Power Transistor
Datasheet	IPI072N10N3 Datasheet
Additional preview pages of the IPI072N10N3 datasheet.

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Full PDF Text Transcription

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IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPI072N10N3 G IPP072N10N3 G 100 V 7.

Published: Oct 29, 2020 |